GlobalFoundries and RAAAM Memory Technologies announced the completion of a Gain-Cell RAM (GCRAM) test vehicle tape-out on GlobalFoundries’ FD-SOI platform. The milestone marks progress in developing on-chip memory solutions with reduced area and power consumption compared to traditional SRAM.
The GCRAM technology targets a 40% reduction in memory area and up to 60% lower power consumption relative to SRAM, according to the companies. The test vehicle was co-designed with modified design rules on GlobalFoundries’ FDX FD-SOI platform, leveraging the manufacturer’s manufacturing capabilities.
NXP Semiconductors is evaluating the GCRAM solution for potential integration into its products. The partnership aims to provide customers with design access to GCRAM technology starting in early 2027.
Robert Giterman, CEO and co-founder of RAAAM Memory Technologies, said the tape-out demonstrates the synergy between RAAAM’s memory innovations and GlobalFoundries’ manufacturing platform. Sudipto Bose, vice president of FD-SOI product management at GlobalFoundries, highlighted the solution’s applicability for AI and other high-performance applications.
GlobalFoundries’ shares closed at $43.93, down 1.70%, before after-hours trading showed a gain to $44.19, up 0.59%.
