Micron Technology Inc. demonstrated a 512GB DDR5 registered DIMM on multiple server platforms, marking one of the highest-capacity modules for data center use.
The module uses vertical interconnect packaging with through-silicon vias to stack DRAM dies, enabling data rates up to 9,200 megatransfers per second. It can deliver up to 12 terabytes of DDR5 memory in a single 24-slot dual-socket server, according to the company.
Micron said the 512GB RDIMM reduces operating power by more than 60% compared with using four 128GB modules, citing 16.0 watts per 512GB unit versus a combined 44.2 watts for four 128GB units. For memory-bound workloads such as Spark support vector machine-based data analytics, Micron said the new module can deliver up to 1.4 times higher performance compared with 256GB DDR5 configurations.
AMD and Intel are both validating the module for next-generation server platforms. Amit Goel, corporate vice president at AMD, said in a statement: "AMD solutions continue to advance data center performance, scalability and efficiency as AI and data-intensive workloads reshape infrastructure requirements." Karin Eibschitz Segal, general manager of platform and system engineering at Intel's Data Center Group, said the company is working with Micron to validate the module for future server platforms.
Darrin Alves, chief information officer for infrastructure platforms at JPMorganChase, said: "Higher-capacity memory technologies like Micron's 512GB RDIMMs will help enterprises support larger in-memory workloads, improve resource utilization and enhance the flexibility needed to scale modern computing environments."
Micron expects the 512GB RDIMMs to enter volume production in the second half of 2027. The company is based in Boise, Idaho, and trades on the NASDAQ under the ticker MU.
