China’s leading memory manufacturer ChangXin Memory Technologies (CXMT) has initiated small-scale production of next-generation High Bandwidth Memory 3E (HBM3E) chips, according to a report by The Information.
The move positions CXMT roughly one generation behind global industry leaders SK Hynix, Samsung Electronics, and Micron Technology, which have already commercialized HBM3E solutions for AI infrastructure. Domestic chip design units, including Alibaba’s T-Head and Cambricon Technologies, are currently testing CXMT’s HBM3E chips, with plans to integrate them into commercial processors by next year. A broader commercial expansion of CXMT’s HBM3E production is targeted for 2027.
CXMT, founded in 2016 with backing from local governments, has rapidly scaled its operations since its historic Shanghai IPO in 2024, raising $8.6 billion and recording a 472% surge in its stock debut. First-half revenue reached 150.3 billion yuan ($22.3 billion), nearly tenfold year-over-year, while net profit totaled 77.6 billion yuan ($11.5 billion), reversing prior-period losses.
Despite progress, CXMT faces operational challenges, including low manufacturing yields and restricted access to advanced semiconductor equipment due to Western export controls. Industry analysts estimate CXMT’s HBM technology remains 3 to 5 years behind its global rivals, but the company’s advancements signal a strategic push to reduce China’s dependence on foreign memory suppliers amid rising geopolitical tensions.
